R. MacKenzie, J.J. Lim, S. Bull, S. Sujecki, E. Larkins
{"title":"Thermal Boundary Resistance in Optoelectronic Devices","authors":"R. MacKenzie, J.J. Lim, S. Bull, S. Sujecki, E. Larkins","doi":"10.1109/NUSOD.2007.4349001","DOIUrl":null,"url":null,"abstract":"A state-of-the-art electro-optical-thermal simulation tool is enhanced to include the effect of phonon reflections at epitaxial interfaces. A detailed numerical investigation of the alteration in electron/hole/phonon scattering rates and heat fluxes due to the thermal boundary resistance at hetero-junctions and epitaxial interfaces is carried out. The heat flux in a 1.3 mum edge-emitting laser and through VCSEL mirrors is considered. An increase in QW temperature within the edge-emitting laser of up to 0.3 K is observed.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2007.4349001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A state-of-the-art electro-optical-thermal simulation tool is enhanced to include the effect of phonon reflections at epitaxial interfaces. A detailed numerical investigation of the alteration in electron/hole/phonon scattering rates and heat fluxes due to the thermal boundary resistance at hetero-junctions and epitaxial interfaces is carried out. The heat flux in a 1.3 mum edge-emitting laser and through VCSEL mirrors is considered. An increase in QW temperature within the edge-emitting laser of up to 0.3 K is observed.
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