Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349004
M. Sabathil, A. Laubsch, N. Linder
The measurement of bias and temperature dependent photoluminescence, photocurrent and their decay times allows to deduce important physical properties such as barrier height, electron-hole overlap and the magnitude of the piezoelectric field in InGaN quantum wells. However the analysis of these experiments demands for a detailed physical model based on a realistic device structure which is able to predict the measured quantities. In this work a self-consistent model is presented based on a realistic description of the alloy and doping profile of a green InGaN single quantum well light emitting diode. The model succeeds in the quantitative prediction of the quantum confined Stark shift and the associated change in the electron-hole overlap measured via the change in the bimolecular decay rate using literature parameters for the piezoelectric constants. The blue shift of the emission under forward current conditions can be attributed to the carrier induced screening of the piezoelectric charges as predicted by the model.
{"title":"Quantitative modelling of resonant PL in InGaN SQW-LED structure","authors":"M. Sabathil, A. Laubsch, N. Linder","doi":"10.1109/NUSOD.2007.4349004","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349004","url":null,"abstract":"The measurement of bias and temperature dependent photoluminescence, photocurrent and their decay times allows to deduce important physical properties such as barrier height, electron-hole overlap and the magnitude of the piezoelectric field in InGaN quantum wells. However the analysis of these experiments demands for a detailed physical model based on a realistic device structure which is able to predict the measured quantities. In this work a self-consistent model is presented based on a realistic description of the alloy and doping profile of a green InGaN single quantum well light emitting diode. The model succeeds in the quantitative prediction of the quantum confined Stark shift and the associated change in the electron-hole overlap measured via the change in the bimolecular decay rate using literature parameters for the piezoelectric constants. The blue shift of the emission under forward current conditions can be attributed to the carrier induced screening of the piezoelectric charges as predicted by the model.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124916953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349040
M. Connelly, L. Barry, B. Kennedy, D. Reid
A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor optical amplifier is presented. The model utilizes a modified Schrodinger equation to model the pulse propagation. The Schrodinger equation parameters such as the material gain first and second order dispersion, linewidth enhancement factors and optical loss coefficient are obtained using a previously developed steady-state model. The predicted four-wave mixing pulse characteristics show reasonably good agreement with experimental pulse characteristics obtained using frequency resolved optical gating.
{"title":"Numerical Analysis of Four-Wave Mixing between 2 ps mode-locked laser pulses in a Tensile-Strained Bulk SOA","authors":"M. Connelly, L. Barry, B. Kennedy, D. Reid","doi":"10.1109/NUSOD.2007.4349040","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349040","url":null,"abstract":"A numerical model of four-wave mixing between 2-ps pulses in a tensile-strained bulk semiconductor optical amplifier is presented. The model utilizes a modified Schrodinger equation to model the pulse propagation. The Schrodinger equation parameters such as the material gain first and second order dispersion, linewidth enhancement factors and optical loss coefficient are obtained using a previously developed steady-state model. The predicted four-wave mixing pulse characteristics show reasonably good agreement with experimental pulse characteristics obtained using frequency resolved optical gating.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129636603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349018
Jae-Hong Park, I. Khoo
We will discuss the reflection and transmission coefficients in the negative index materials. Based on the finite differential time domain approach, we obtain the reflection and transmission coefficients depending on permittivity and permeability at a fixed frequency. The transmissivity and reflectivity will be also examined. Simulation results are in good agreement with the theoretical ones. This technique can be easily extended to the multi-layered structure with negative index materials to design the optical system.
{"title":"Finite difference time domain analysis for measuring transmission and reflection coefficients in negative index materials","authors":"Jae-Hong Park, I. Khoo","doi":"10.1109/NUSOD.2007.4349018","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349018","url":null,"abstract":"We will discuss the reflection and transmission coefficients in the negative index materials. Based on the finite differential time domain approach, we obtain the reflection and transmission coefficients depending on permittivity and permeability at a fixed frequency. The transmissivity and reflectivity will be also examined. Simulation results are in good agreement with the theoretical ones. This technique can be easily extended to the multi-layered structure with negative index materials to design the optical system.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132332163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349009
M. F. Pereira
The intersubband antipolariton quasiparticle concept is summarized showing that the coupling between light and intersubband excitations is fundamentally different from interband excitonic polaritons. It is demonstrated how bosonic correlations can be manipulated by selective carrier injection.
{"title":"Intersubband Antipolariton: A New Quasiparticle","authors":"M. F. Pereira","doi":"10.1109/NUSOD.2007.4349009","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349009","url":null,"abstract":"The intersubband antipolariton quasiparticle concept is summarized showing that the coupling between light and intersubband excitations is fundamentally different from interband excitonic polaritons. It is demonstrated how bosonic correlations can be manipulated by selective carrier injection.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127643013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349031
P. Yoder
Theoretical and experimental analysis of high-speed quasi-unipolar photodiode operation is presented. Design optimization is demonstrated to lead to significant improvements in both modulation bandwidth and optical saturation power, and results are interpreted on the basis of physical modeling.
{"title":"High-Speed Photodetection Exploiting Quasi-Unipolar Charge Transport","authors":"P. Yoder","doi":"10.1109/NUSOD.2007.4349031","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349031","url":null,"abstract":"Theoretical and experimental analysis of high-speed quasi-unipolar photodiode operation is presented. Design optimization is demonstrated to lead to significant improvements in both modulation bandwidth and optical saturation power, and results are interpreted on the basis of physical modeling.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"61 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132148231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349038
C. Tan, Y. Wang, H. Djie, B. Ooi
We present the development of theoretical model based on multi-population rate equation to assess the derivative optical gain and chirp characteristics from the multiple states broadband InGaAs/GaAs quantum-dots laser. Our results show that the linewidth enhancement factor from the ground state is slightly larger but in the same order of magnitude as the values obtained in conventional quantum-dot lasers. This study is important in proving the competency of this novel device for diverse applications.
{"title":"Simulation of Derivative Characteristics of Broadband Quantum Dot Lasers","authors":"C. Tan, Y. Wang, H. Djie, B. Ooi","doi":"10.1109/NUSOD.2007.4349038","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349038","url":null,"abstract":"We present the development of theoretical model based on multi-population rate equation to assess the derivative optical gain and chirp characteristics from the multiple states broadband InGaAs/GaAs quantum-dots laser. Our results show that the linewidth enhancement factor from the ground state is slightly larger but in the same order of magnitude as the values obtained in conventional quantum-dot lasers. This study is important in proving the competency of this novel device for diverse applications.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130823852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349043
A. Demircan, M. Kroh, M. Pietrzyk, B. Huttl, U. Bandelow
While usually the generation of a Stokes component is attributed to Raman scattering, we present here experimentally and numerically a mechanism which can be explained by the nonlinear Schrodinger equation alone. It can be employed to excite new frequency components on the red side, by using pulse splitting in the normal dispersion regime.
{"title":"Non-Raman redshift by pulse splitting","authors":"A. Demircan, M. Kroh, M. Pietrzyk, B. Huttl, U. Bandelow","doi":"10.1109/NUSOD.2007.4349043","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349043","url":null,"abstract":"While usually the generation of a Stokes component is attributed to Raman scattering, we present here experimentally and numerically a mechanism which can be explained by the nonlinear Schrodinger equation alone. It can be employed to excite new frequency components on the red side, by using pulse splitting in the normal dispersion regime.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129254096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349021
Meijun Lu, S. Bowden, R. Birkmire
Two-dimensional numerical simulations for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have been studied with the software package Sentaurus Device. Distribution of trap states and thermionic emission were considered for amorphous-silicon material and amorphous-silicon/crystalline-silicon hetero-interface, respectively. The 2D distribution and current-voltage curve were generated. It was found that the performance of IBC-SHJ solar cell depends on the front surface recombination velocity and the dimensions of P, N contacts, which is also shown in simulated LBIC line scan. The simulations show that after optimization, an efficiency of 22% can be achieved for IBC-SHJ solar cells.
{"title":"Two Dimensional Modeling of Interdigitated Back Contact Silicon Heterojunction Solar Cells","authors":"Meijun Lu, S. Bowden, R. Birkmire","doi":"10.1109/NUSOD.2007.4349021","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349021","url":null,"abstract":"Two-dimensional numerical simulations for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have been studied with the software package Sentaurus Device. Distribution of trap states and thermionic emission were considered for amorphous-silicon material and amorphous-silicon/crystalline-silicon hetero-interface, respectively. The 2D distribution and current-voltage curve were generated. It was found that the performance of IBC-SHJ solar cell depends on the front surface recombination velocity and the dimensions of P, N contacts, which is also shown in simulated LBIC line scan. The simulations show that after optimization, an efficiency of 22% can be achieved for IBC-SHJ solar cells.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126593467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349027
S. Odermatt, B. Witzigmann, B. Schmithusen
Large-signal modulation characteristics such as intermodulation distortion and eye-diagrams are key specifications in analog and digital applications of optoelectronic devices. In this work, a novel framework based on a multi-dimensional time-domain/frequency-domain multi-tone harmonic balance method is presented to model these characteristics for semiconductor lasers on device level. After a short introduction of the multi-tone harmonic balance method, the large-signal modulation characteristics of an AlGaAs/GaAs-based vertical-cavity surface- emitting laser are analyzed using a two-dimensional electro-opto-thermal simulation setup. The simulations reveal the relationship between the bias conditions, active region carrier dynamics and the large-signal characteristics.
{"title":"Large-Signal Modeling on Device Level: Intermodulation Distortion and Eye-Diagrams of Semiconductor Lasers","authors":"S. Odermatt, B. Witzigmann, B. Schmithusen","doi":"10.1109/NUSOD.2007.4349027","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349027","url":null,"abstract":"Large-signal modulation characteristics such as intermodulation distortion and eye-diagrams are key specifications in analog and digital applications of optoelectronic devices. In this work, a novel framework based on a multi-dimensional time-domain/frequency-domain multi-tone harmonic balance method is presented to model these characteristics for semiconductor lasers on device level. After a short introduction of the multi-tone harmonic balance method, the large-signal modulation characteristics of an AlGaAs/GaAs-based vertical-cavity surface- emitting laser are analyzed using a two-dimensional electro-opto-thermal simulation setup. The simulations reveal the relationship between the bias conditions, active region carrier dynamics and the large-signal characteristics.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126688004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-10-15DOI: 10.1109/NUSOD.2007.4349022
S. Hintschich, M. Langner, H. Gothe, V. Lyssenko, H. Frob, K. Leo
We have measured the input-output curve of an organic vertical-cavity surface-emitting laser (OVCSEL), made of Alq3:DCM, over more than 2 orders of magnitude beyond threshold. The characteristics cannot be explained by the standard theory of lasing, which uses a single spontaneous emission factor, beta. By assuming an inhomogeneously broadened distribution of beta values we are able to qualitatively model the observed input-output curve.
{"title":"Stretched input-output characteristic in inhomogeneously broadened 1asing system","authors":"S. Hintschich, M. Langner, H. Gothe, V. Lyssenko, H. Frob, K. Leo","doi":"10.1109/NUSOD.2007.4349022","DOIUrl":"https://doi.org/10.1109/NUSOD.2007.4349022","url":null,"abstract":"We have measured the input-output curve of an organic vertical-cavity surface-emitting laser (OVCSEL), made of Alq3:DCM, over more than 2 orders of magnitude beyond threshold. The characteristics cannot be explained by the standard theory of lasing, which uses a single spontaneous emission factor, beta. By assuming an inhomogeneously broadened distribution of beta values we are able to qualitatively model the observed input-output curve.","PeriodicalId":255219,"journal":{"name":"2007 International Conference on Numerical Simulation of Optoelectronic Devices","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121157078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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