A. Lyamkina, Y. G. Galitsyn, D. Dmitriev, S. P. Moshchenko, A. Toropov
{"title":"Two-stage nucleation of indium droplets on GaAs (001) substrate","authors":"A. Lyamkina, Y. G. Galitsyn, D. Dmitriev, S. P. Moshchenko, A. Toropov","doi":"10.1109/EDM.2009.5173922","DOIUrl":null,"url":null,"abstract":"The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5⋅107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"149 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173922","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5⋅107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
