A. Zaka, T. Herrmann, R. Richter, S. Duenkel, Ruchil Jain
{"title":"TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash Memory","authors":"A. Zaka, T. Herrmann, R. Richter, S. Duenkel, Ruchil Jain","doi":"10.23919/SISPAD49475.2020.9241647","DOIUrl":null,"url":null,"abstract":"The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade-off between the various figures of merit and highlights the need for a comprehensive DC/transient simulation approach during Flash cell optimization.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade-off between the various figures of merit and highlights the need for a comprehensive DC/transient simulation approach during Flash cell optimization.
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