J. El Beyrouthy, A. Vauthelin, M. Seif, B. Sagnes, F. Pascal, A. Hoffman, M. Valenza, J. Boch, T. Maraine, S. Haendler, A. Gauthier, P. Chevalier, D. Gloria
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引用次数: 1
Abstract
This study presents an investigation of the dose response of Si/SiGe HBTs developed with the last generation of BiCMOS technologies. DC electrical characterization and low-frequency noise measurements are carried out to evaluate the post-radiation degradations.
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