A. Bolotnikov, P. Losee, K. Matocha, J. Glaser, J. Nasadoski, Lei Wang, A. Elasser, S. Arthur, Z. Stum, P. Sandvik, Y. Sui, T. Johnson, J. Sabate, L. Stevanovic
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引用次数: 43
Abstract
This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with 3-level converter stacks of faster 1.7kV IGBTs.
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