A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr
{"title":"Evaluation of ZrO/sub 2/ gate dielectrics for advanced CMOS devices","authors":"A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr","doi":"10.1109/ESSDERC.2003.1256916","DOIUrl":null,"url":null,"abstract":"We discuss modeling issues of ZrO/sub 2/ insulating layers fabricated by metal-organic chemical vapor deposition (MOCVD). Tunneling through such layers cannot be described within the established Tsu-Esaki model due to the presence of a strong trap-assisted tunneling component. Trap energy levels and. concentrations can be extracted from the time constants of the measured trap charging and discharging processes. A trap concentration of 4.5/spl times/10/sup 18/ cm/sup -3/ with a trap energy level of 1.3 eV below the ZrO/sub 2/ conduction band edge was found for the considered layer. The parameters are used to simulate a 50 nm 'well-tempered' MOSFET and the influence of the high-/spl kappa/ dielectric on the threshold voltage was studied. Two counteracting effects are found: while the fringing fields from the drain contact reduce the threshold voltage, the presence of traps in the dielectric can lead to a strong increase of the threshold voltage.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"255 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We discuss modeling issues of ZrO/sub 2/ insulating layers fabricated by metal-organic chemical vapor deposition (MOCVD). Tunneling through such layers cannot be described within the established Tsu-Esaki model due to the presence of a strong trap-assisted tunneling component. Trap energy levels and. concentrations can be extracted from the time constants of the measured trap charging and discharging processes. A trap concentration of 4.5/spl times/10/sup 18/ cm/sup -3/ with a trap energy level of 1.3 eV below the ZrO/sub 2/ conduction band edge was found for the considered layer. The parameters are used to simulate a 50 nm 'well-tempered' MOSFET and the influence of the high-/spl kappa/ dielectric on the threshold voltage was studied. Two counteracting effects are found: while the fringing fields from the drain contact reduce the threshold voltage, the presence of traps in the dielectric can lead to a strong increase of the threshold voltage.
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