In-situ monitoring of bond degradation in power ICs under high current stress

B. Krabbenborg
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引用次数: 4

Abstract

Degradation kinetics for Au bond balls on Al bond pads under high current stress (2.5 A) show an order of magnitude difference in lifetime between positive and negative current stress. The failure mechanisms are discussed and a comparison with low-current lifetime is given, resulting in data-driven high current bond pad design rules.
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大功率集成电路在大电流应力下键退化的原位监测
高电流(2.5 A)下,铝键垫上的金键球的降解动力学表明,正、负电流应力下的寿命存在数量级差异。讨论了失效机理,并与低电流寿命进行了比较,得出了数据驱动的大电流键合垫设计规则。
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