Pub Date : 1999-04-01DOI: 10.1109/RELPHY.1998.670663
S. Domae, H. Masuda, K. Tateiwa, Y. Kato, M. Fujimoto
Stress-induced voiding (SV) in Al-alloy films with stacked tungsten via structures was investigated using new test structures. Voids were found in interconnections with stacked and borderless vias that had increased resistance after aging tests. Failure occurs most frequently when the test structures are stored at around 250/spl deg/C. This behavior can be explained by the diffusion creep model as being like SV in a flat line (McPherson and Dunn, 1987). A model of SV was obtained from thermal stress simulation and transmission electron microscopy (TEM) observation. Stress increases between upper and lower plugs with temperature increases over 175/spl deg/C. Grains, which have high-angle misorientation, are often found above plugs. The tensile stress and grain misorientation should accelerate the void growth. O/sub 2/ plasma post metal etch treatment was found to be effective for elimination of SV in stacked via structures.
{"title":"Stress-induced voiding in stacked tungsten via structure","authors":"S. Domae, H. Masuda, K. Tateiwa, Y. Kato, M. Fujimoto","doi":"10.1109/RELPHY.1998.670663","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670663","url":null,"abstract":"Stress-induced voiding (SV) in Al-alloy films with stacked tungsten via structures was investigated using new test structures. Voids were found in interconnections with stacked and borderless vias that had increased resistance after aging tests. Failure occurs most frequently when the test structures are stored at around 250/spl deg/C. This behavior can be explained by the diffusion creep model as being like SV in a flat line (McPherson and Dunn, 1987). A model of SV was obtained from thermal stress simulation and transmission electron microscopy (TEM) observation. Stress increases between upper and lower plugs with temperature increases over 175/spl deg/C. Grains, which have high-angle misorientation, are often found above plugs. The tensile stress and grain misorientation should accelerate the void growth. O/sub 2/ plasma post metal etch treatment was found to be effective for elimination of SV in stacked via structures.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116130727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-03-01DOI: 10.1109/RELPHY.1998.670455
C. Tsai, L. Liou
Dislocation generation and multiplication in heterojunction bipolar transistors (HBTs) under electrical bias was studied using a finite element model. This model was developed to solve a physical viscoplastic solid mechanics problem using a time-dependent constitutive equation relating the dislocation dynamics to plastic deformation. The dislocations in HBTs are generated by the excessive stresses, including thermal stress generated by the temperature change in the device during operation. It was found that the dislocation generation rate at the early stage and the stationary dislocation density depend strongly on the current density.
{"title":"Dislocation dynamics in heterojunction bipolar transistor under current induced thermal stress","authors":"C. Tsai, L. Liou","doi":"10.1109/RELPHY.1998.670455","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670455","url":null,"abstract":"Dislocation generation and multiplication in heterojunction bipolar transistors (HBTs) under electrical bias was studied using a finite element model. This model was developed to solve a physical viscoplastic solid mechanics problem using a time-dependent constitutive equation relating the dislocation dynamics to plastic deformation. The dislocations in HBTs are generated by the excessive stresses, including thermal stress generated by the temperature change in the device during operation. It was found that the dislocation generation rate at the early stage and the stationary dislocation density depend strongly on the current density.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"1475 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121715395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-13DOI: 10.1109/RELPHY.1998.670666
T. Yoshida, S. Hashimoto, Y. Mitsushima, T. Ohwaki, Y. Taga
The effect of residual gas constituents and substrate temperature during Ti sputtering on the texture of TiN/Ti films deposited on SiO/sub 2//Si substrates has been investigated. The Ti(002) and TiN(111) preferred texture of the films deposited at 350°C was improved drastically by increasing the H/sub 2/O partial pressure from lxl0-9 to 3xi0-8 Torr. Both the Ti(002) and TiN(lll) texture showed a similar H/sub 2/O partial pressure and substrate temperature dependence because of the epitaxial transfer between these planes. The improved Ti(002) texture was attributed to the self-assembly of Ti atoms on the SiO/sub 2/ surface, which had a low surface free energy due to the formation of surface OH groups. The AlSiCu/Ti/TiN/Ti film fabricated with the highly-textured TiN/Ti film showed a strong Al(111) texture and had a smooth surface. Moreover, interconnects from this improved film had longer EM lifetimes.
{"title":"Effect of H/sub 2/O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu-Ti-TiN-Ti metallization","authors":"T. Yoshida, S. Hashimoto, Y. Mitsushima, T. Ohwaki, Y. Taga","doi":"10.1109/RELPHY.1998.670666","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670666","url":null,"abstract":"The effect of residual gas constituents and substrate temperature during Ti sputtering on the texture of TiN/Ti films deposited on SiO/sub 2//Si substrates has been investigated. The Ti(002) and TiN(111) preferred texture of the films deposited at 350°C was improved drastically by increasing the H/sub 2/O partial pressure from lxl0-9 to 3xi0-8 Torr. Both the Ti(002) and TiN(lll) texture showed a similar H/sub 2/O partial pressure and substrate temperature dependence because of the epitaxial transfer between these planes. The improved Ti(002) texture was attributed to the self-assembly of Ti atoms on the SiO/sub 2/ surface, which had a low surface free energy due to the formation of surface OH groups. The AlSiCu/Ti/TiN/Ti film fabricated with the highly-textured TiN/Ti film showed a strong Al(111) texture and had a smooth surface. Moreover, interconnects from this improved film had longer EM lifetimes.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128723157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1109/RELPHY.1998.670462
E. I. Cole, P. Tangyunyong, D. Barton
A new failure analysis technique has been developed for backside and frontside localization of open and shorted interconnections on ICs. This scanning optical microscopy technique takes advantage of the interactions between IC defects and localized heating using a focused infrared laser (/spl lambda/=1340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The method utilizes the Seebeck effect to localize open interconnections and thermally-induced voltage alteration (TIVA) to detect shorts. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed.
{"title":"Backside localization of open and shorted IC interconnections","authors":"E. I. Cole, P. Tangyunyong, D. Barton","doi":"10.1109/RELPHY.1998.670462","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670462","url":null,"abstract":"A new failure analysis technique has been developed for backside and frontside localization of open and shorted interconnections on ICs. This scanning optical microscopy technique takes advantage of the interactions between IC defects and localized heating using a focused infrared laser (/spl lambda/=1340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The method utilizes the Seebeck effect to localize open interconnections and thermally-induced voltage alteration (TIVA) to detect shorts. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116949307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-01DOI: 10.1109/RELPHY.1998.670669
S. Rochel, G. Steele, J. Lloyd, S. Z. Hussain, D. Overhauser
Reliability analysis has not been promoted to the full-chip realm because techniques to extract, manage, and process full-chip power grid and signal data have not been previously available. This paper introduces techniques that have been developed to permit both full-chip power grid and signal net electromigration and Joule heating analysis. Results of this analysis provide feedback to the designer to permit easy design modification to provide superior "designed-in" long term reliability.
{"title":"Full-chip reliability analysis","authors":"S. Rochel, G. Steele, J. Lloyd, S. Z. Hussain, D. Overhauser","doi":"10.1109/RELPHY.1998.670669","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670669","url":null,"abstract":"Reliability analysis has not been promoted to the full-chip realm because techniques to extract, manage, and process full-chip power grid and signal data have not been previously available. This paper introduces techniques that have been developed to permit both full-chip power grid and signal net electromigration and Joule heating analysis. Results of this analysis provide feedback to the designer to permit easy design modification to provide superior \"designed-in\" long term reliability.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128092953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-06-01DOI: 10.1109/RELPHY.1998.670449
Y. Chen, J. Suehle, Chi-cheong Shen, J. Bernstein, C. Messick, P. Chaparala
A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.
{"title":"The correlation of highly accelerated Q/sub bd/ tests to TDDB life tests for ultra-thin gate oxides","authors":"Y. Chen, J. Suehle, Chi-cheong Shen, J. Bernstein, C. Messick, P. Chaparala","doi":"10.1109/RELPHY.1998.670449","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670449","url":null,"abstract":"A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130799645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-03-30DOI: 10.1109/RELPHY.1998.670458
Q. Kim, B. Stark, S. Kayali
An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.
{"title":"A novel, high resolution, non-contact channel temperature measurement technique","authors":"Q. Kim, B. Stark, S. Kayali","doi":"10.1109/RELPHY.1998.670458","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670458","url":null,"abstract":"An in-situ optical technique based on infrared emission spectroscopy has been developed for noncontact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). This method was demonstrated on powered and unpowered GaAs MESFETs, attaining a spatial resolution of 0.5 /spl mu/m.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132620202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-03-01DOI: 10.1109/RELPHY.1998.670438
D. M. Tanner, W. M. Miller, W. Eaton, L. W. Irwin, K. Peterson, M. Dugger, D. Senft, N. F. Smith, P. Tangyunyong, S. Miller
Experiments have been performed on surface micromachined microengines driving load gears to determine the effect of the rotation frequency on median cycles to failure. We did observe a frequency dependence and have developed a model based on fundamental wear mechanisms and forces exhibited in resonant mechanical systems. Stressing loaded microengines caused observable wear in the rotating joints and, in a few instances, led to fracture of the pin joint in the drive gear.
{"title":"The effect of frequency on the lifetime of a surface micromachined microengine driving a load","authors":"D. M. Tanner, W. M. Miller, W. Eaton, L. W. Irwin, K. Peterson, M. Dugger, D. Senft, N. F. Smith, P. Tangyunyong, S. Miller","doi":"10.1109/RELPHY.1998.670438","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670438","url":null,"abstract":"Experiments have been performed on surface micromachined microengines driving load gears to determine the effect of the rotation frequency on median cycles to failure. We did observe a frequency dependence and have developed a model based on fundamental wear mechanisms and forces exhibited in resonant mechanical systems. Stressing loaded microengines caused observable wear in the rotating joints and, in a few instances, led to fracture of the pin joint in the drive gear.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126414999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-03-01DOI: 10.1109/RELPHY.1998.670437
S. Miller, M. S. Rodgers, G. LaVigne, J. Sniegowski, P. Clews, D. M. Tanner, K. Peterson
In order for the rapidly emerging field of microelectromechanical systems (MEMS) to meet its extraordinary expectations with regard to commercial impact, issues pertaining to failure must be understood. We identify failure modes common to a broad range of MEMS actuators, including adhesion (stiction) and friction-induced failures caused by improper operational methods, mechanical instabilities, and electrical instabilities. Demonstrated methods to mitigate these failure modes include implementation of optimized designs, model-based operational methods, and chemical surface treatments.
{"title":"Failure modes in surface micromachined microelectromechanical actuators","authors":"S. Miller, M. S. Rodgers, G. LaVigne, J. Sniegowski, P. Clews, D. M. Tanner, K. Peterson","doi":"10.1109/RELPHY.1998.670437","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670437","url":null,"abstract":"In order for the rapidly emerging field of microelectromechanical systems (MEMS) to meet its extraordinary expectations with regard to commercial impact, issues pertaining to failure must be understood. We identify failure modes common to a broad range of MEMS actuators, including adhesion (stiction) and friction-induced failures caused by improper operational methods, mechanical instabilities, and electrical instabilities. Demonstrated methods to mitigate these failure modes include implementation of optimized designs, model-based operational methods, and chemical surface treatments.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131454681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-10-01DOI: 10.1109/RELPHY.1998.670461
I. De Wolf, D. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. Maes
Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 /spl mu/m wide TiSi/sub 2/ lines. It is shown that these techniques allow nondestructive mapping of the local phase of TiSi/sub 2/. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi/sub 2/ in the lines.
{"title":"A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy","authors":"I. De Wolf, D. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. Maes","doi":"10.1109/RELPHY.1998.670461","DOIUrl":"https://doi.org/10.1109/RELPHY.1998.670461","url":null,"abstract":"Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 /spl mu/m wide TiSi/sub 2/ lines. It is shown that these techniques allow nondestructive mapping of the local phase of TiSi/sub 2/. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi/sub 2/ in the lines.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117252812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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