T. Yoshida, S. Hashimoto, Y. Mitsushima, T. Ohwaki, Y. Taga
{"title":"Effect of H/sub 2/O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu-Ti-TiN-Ti metallization","authors":"T. Yoshida, S. Hashimoto, Y. Mitsushima, T. Ohwaki, Y. Taga","doi":"10.1109/RELPHY.1998.670666","DOIUrl":null,"url":null,"abstract":"The effect of residual gas constituents and substrate temperature during Ti sputtering on the texture of TiN/Ti films deposited on SiO/sub 2//Si substrates has been investigated. The Ti(002) and TiN(111) preferred texture of the films deposited at 350°C was improved drastically by increasing the H/sub 2/O partial pressure from lxl0-9 to 3xi0-8 Torr. Both the Ti(002) and TiN(lll) texture showed a similar H/sub 2/O partial pressure and substrate temperature dependence because of the epitaxial transfer between these planes. The improved Ti(002) texture was attributed to the self-assembly of Ti atoms on the SiO/sub 2/ surface, which had a low surface free energy due to the formation of surface OH groups. The AlSiCu/Ti/TiN/Ti film fabricated with the highly-textured TiN/Ti film showed a strong Al(111) texture and had a smooth surface. Moreover, interconnects from this improved film had longer EM lifetimes.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1998.670666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The effect of residual gas constituents and substrate temperature during Ti sputtering on the texture of TiN/Ti films deposited on SiO/sub 2//Si substrates has been investigated. The Ti(002) and TiN(111) preferred texture of the films deposited at 350°C was improved drastically by increasing the H/sub 2/O partial pressure from lxl0-9 to 3xi0-8 Torr. Both the Ti(002) and TiN(lll) texture showed a similar H/sub 2/O partial pressure and substrate temperature dependence because of the epitaxial transfer between these planes. The improved Ti(002) texture was attributed to the self-assembly of Ti atoms on the SiO/sub 2/ surface, which had a low surface free energy due to the formation of surface OH groups. The AlSiCu/Ti/TiN/Ti film fabricated with the highly-textured TiN/Ti film showed a strong Al(111) texture and had a smooth surface. Moreover, interconnects from this improved film had longer EM lifetimes.
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