Theoretical study of electronic transport in monolayer SnSe

Abstract

Monolayer SnSe is a two-dimensional (2D) material with an indirect band gap ($\sim$ 0.92 eV) that can be obtained relatively easily by exfoliating bulk SnSe crystals. Like most 2D van der Waals monolayers, its layered nature reduces or eliminates the defects found in bulk materials, such as surface interface roughness and dangling bonds. Here, we show promising results of first-principle calculations of the low-field mobility and high-field characteristics of monolayer SnSe by implementing the fullband Monte Carlo approach.