{"title":"High Performance GaAs Schottky Barrier Diodes using a Cantilevered Metal Contact","authors":"D. Boccon-Gibod, P. Harrop","doi":"10.1109/EUMA.1978.332611","DOIUrl":null,"url":null,"abstract":"A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to define the active diode area. Cut-off frequencies in excess of 2 000 GHz have been measured and series resistances around 1.3 ohms. The diodes have been used in waveguide and microstrip mixer structures and conversion loss measurements will be presented.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to define the active diode area. Cut-off frequencies in excess of 2 000 GHz have been measured and series resistances around 1.3 ohms. The diodes have been used in waveguide and microstrip mixer structures and conversion loss measurements will be presented.
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