Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles

Abstract

Defects in Schottky barrier diodes (SBDs) formed on low-doped 4H-silicon carbide (SiC) have been studied by charge transient spectroscopy using single high energy alpha particles as the trap filling pulse. We have successfully detected defect levels in as-fabricated, electron-irradiated and thermally annealed SBDs where the high series resistance precludes the use of standard techniques such as deep level transient spectroscopy (DLTS).