J. Yeh, F. Chen, D. Chao, Wen-Han Wang, Yi-Chan Chen, Chain-Ming Lee, M. Tsai, M. Kao
{"title":"Snapback by Hot Filament","authors":"J. Yeh, F. Chen, D. Chao, Wen-Han Wang, Yi-Chan Chen, Chain-Ming Lee, M. Tsai, M. Kao","doi":"10.1109/NVMT.2006.378883","DOIUrl":null,"url":null,"abstract":"A simulation procedure using the conventional thermal-electric finite element method for the phase change memory has been developed. By introducing a defect on the amorphous chalcogenide of a reset phase change memory, the snapback by hot filament due to thermal runaway has been investigated by the numerical simulations with three-dimensional model.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 7th Annual Non-Volatile Memory Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMT.2006.378883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A simulation procedure using the conventional thermal-electric finite element method for the phase change memory has been developed. By introducing a defect on the amorphous chalcogenide of a reset phase change memory, the snapback by hot filament due to thermal runaway has been investigated by the numerical simulations with three-dimensional model.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
