Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378870
A. Régnier, J. Portal, H. Aziza, P. Masson, R. Bouchakour, C. Relliaud, D. Née, J. Mirabel
The objective of this paper is to present a EEPROM compact model suitable for SILC simulation. The SILC module allows simulating the retention capability of the cell after stress. Test chip array distribution and standard tunnel capacitor are used to extract the SILC module parameters. Thus the extraction procedure is detailed. The description of the complete model is presented. A simulation example is given and validated versus measurements.
{"title":"EEPROM Compact Model with SILC Simulation Capability","authors":"A. Régnier, J. Portal, H. Aziza, P. Masson, R. Bouchakour, C. Relliaud, D. Née, J. Mirabel","doi":"10.1109/NVMT.2006.378870","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378870","url":null,"abstract":"The objective of this paper is to present a EEPROM compact model suitable for SILC simulation. The SILC module allows simulating the retention capability of the cell after stress. Test chip array distribution and standard tunnel capacitor are used to extract the SILC module parameters. Thus the extraction procedure is detailed. The description of the complete model is presented. A simulation example is given and validated versus measurements.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123542666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378887
Muralikrishnan Balakrishnan, S. C. P. Thermadam, M. Mitkova, M. Kozicki
We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully- erased devices of 350 nm to 1 mum in diameter transitioned from a high resistance state in excess of 100 MOmega to their on state at 1.3 V or less, and the erase was initiated below -0.5 V. The on resistance was a function of programming current and a range of approximately 2 MOmega to below 300 Omega was demonstrated. Switching was possible using 3 V pulses of 1 mus duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 muA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 107 cycles.
{"title":"A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide","authors":"Muralikrishnan Balakrishnan, S. C. P. Thermadam, M. Mitkova, M. Kozicki","doi":"10.1109/NVMT.2006.378887","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378887","url":null,"abstract":"We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully- erased devices of 350 nm to 1 mum in diameter transitioned from a high resistance state in excess of 100 MOmega to their on state at 1.3 V or less, and the erase was initiated below -0.5 V. The on resistance was a function of programming current and a range of approximately 2 MOmega to below 300 Omega was demonstrated. Switching was possible using 3 V pulses of 1 mus duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 muA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 107 cycles.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116144494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378889
T. Kever, B. Klopstra, U. Bottger, R. Waser
In this study we will describe the switching effect in the metal-organic charge transfer complex system Cu:7,7,8,8- Tetracyanoquinodimethane (TCNQ). The samples were prepared by physical vapor deposition (PVD). This process results in the formation of amorphous Cu:TCNQ thin films with a ratio of 1:1 of the metal and the organic compound. Simple capacitor like test structures were prepared with Cu:TCNQ thin films as an active layer. These devices showed reproducible resistive switching. The origin of the bistable switching in Cu:TCNQ thin films is discussed. In this study, we show the existence of two distinctive reversible resistive switching effects in Cu:TCNQ thin films. Three different states could be observed, a high resistance state (RON in the 107 Omega range), a low resistance state (ROFF in the 101 Omega range) and a very low resistance state with metallic like behavior (RMET in the 101 Omega range). The switching to the very low resistance state requires a higher switching voltage and is much less stable than switching to the low resistance state. Therefore, the main focus is on the latter effect which has more potential for possible future applications.
{"title":"On the Existence of Two Different Resistive Switching Mechanisms in Metal Organic Charge Transfer Complex Thin Films","authors":"T. Kever, B. Klopstra, U. Bottger, R. Waser","doi":"10.1109/NVMT.2006.378889","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378889","url":null,"abstract":"In this study we will describe the switching effect in the metal-organic charge transfer complex system Cu:7,7,8,8- Tetracyanoquinodimethane (TCNQ). The samples were prepared by physical vapor deposition (PVD). This process results in the formation of amorphous Cu:TCNQ thin films with a ratio of 1:1 of the metal and the organic compound. Simple capacitor like test structures were prepared with Cu:TCNQ thin films as an active layer. These devices showed reproducible resistive switching. The origin of the bistable switching in Cu:TCNQ thin films is discussed. In this study, we show the existence of two distinctive reversible resistive switching effects in Cu:TCNQ thin films. Three different states could be observed, a high resistance state (RON in the 107 Omega range), a low resistance state (ROFF in the 101 Omega range) and a very low resistance state with metallic like behavior (RMET in the 101 Omega range). The switching to the very low resistance state requires a higher switching voltage and is much less stable than switching to the low resistance state. Therefore, the main focus is on the latter effect which has more potential for possible future applications.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126346723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378871
S. Jacob, L. Perniola, P. Scheiblin, B. De Salvo, G. Lecarval, E. Jalaguier, G. Festes, R. Coppard, F. Boulanger, S. Deleonibus
This work presents TCAD simulations of NOR NC memories performed with commercial tools, which allow for a good understanding of the impact of the localized charge on both electrostatics and dynamics of the cell. The key role of the position of the trapped charges along the channel length on the threshold voltage shift has been put in evidence. Indeed, this result is critical for NOR discrete-trap memories, where the HE injection is essentially aligned with the drain junction.
{"title":"TCAD Modeling and Data of NOR Nanocrystal Memories","authors":"S. Jacob, L. Perniola, P. Scheiblin, B. De Salvo, G. Lecarval, E. Jalaguier, G. Festes, R. Coppard, F. Boulanger, S. Deleonibus","doi":"10.1109/NVMT.2006.378871","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378871","url":null,"abstract":"This work presents TCAD simulations of NOR NC memories performed with commercial tools, which allow for a good understanding of the impact of the localized charge on both electrostatics and dynamics of the cell. The key role of the position of the trapped charges along the channel length on the threshold voltage shift has been put in evidence. Indeed, this result is critical for NOR discrete-trap memories, where the HE injection is essentially aligned with the drain junction.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126574479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378873
C. Muller, L. Courtade, C. Turquat, L. Goux, D. Wouters
Future development of Ferroelectric Random Access Memories (FeRAM) requires integration of three-dimensional (3D) ferroelectric capacitors in replacement of usual planar capacitors. This innovative geometry enables the fabrication of highly reliable memory devices with improved sensing signal. In order to target space applications, it is of primary interest to analyze the effects of ionizing radiations (x-rays, X-rays...) on capacitors integrated in advanced memory architectures. In this paper, effects of x-rays combined with either bias voltage or bipolar electrical cycling were analyzed on 3D ferroelectric capacitor memory-like arrays. Using an experimental setup enabling measurements under radiations, these arrays were submitted to electrical stresses simulating the various states of the memory. For memory-like arrays in "written" state (no applied bias), high dose of X-rays accelerates both fatigue-like (polarization reduction) and imprint-like (voltage shift) phenomena, which may subsequently alter normal memory operations. Nevertheless, it has been shown that repeated cycling makes the degradation mechanisms reversible. Alternatively, for memory-like arrays in "writing" state, two distinct simulated conditions have been considered. If irradiated capacitors are always being written in the same state, huge and irreversible imprint-like effect may cause memory cell "read" or "write" failures. Moreover, if capacitors are cycled in normal conditions (i e. bipolar pulses), the strong acceleration of fatigue mechanism may cause "read" failures since the two remnant states may be indistinguishable during memory reading.
{"title":"Reliability of three-dimensional ferroelectric capacitor memory-like arrays simultaneously submitted to x-rays and electrical stresses","authors":"C. Muller, L. Courtade, C. Turquat, L. Goux, D. Wouters","doi":"10.1109/NVMT.2006.378873","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378873","url":null,"abstract":"Future development of Ferroelectric Random Access Memories (FeRAM) requires integration of three-dimensional (3D) ferroelectric capacitors in replacement of usual planar capacitors. This innovative geometry enables the fabrication of highly reliable memory devices with improved sensing signal. In order to target space applications, it is of primary interest to analyze the effects of ionizing radiations (x-rays, X-rays...) on capacitors integrated in advanced memory architectures. In this paper, effects of x-rays combined with either bias voltage or bipolar electrical cycling were analyzed on 3D ferroelectric capacitor memory-like arrays. Using an experimental setup enabling measurements under radiations, these arrays were submitted to electrical stresses simulating the various states of the memory. For memory-like arrays in \"written\" state (no applied bias), high dose of X-rays accelerates both fatigue-like (polarization reduction) and imprint-like (voltage shift) phenomena, which may subsequently alter normal memory operations. Nevertheless, it has been shown that repeated cycling makes the degradation mechanisms reversible. Alternatively, for memory-like arrays in \"writing\" state, two distinct simulated conditions have been considered. If irradiated capacitors are always being written in the same state, huge and irreversible imprint-like effect may cause memory cell \"read\" or \"write\" failures. Moreover, if capacitors are cycled in normal conditions (i e. bipolar pulses), the strong acceleration of fatigue mechanism may cause \"read\" failures since the two remnant states may be indistinguishable during memory reading.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124197314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378867
G. Krause, K. Hofmann, M. F. Beug, T. Muller
Analyzing the electrical degradation of modern flash memory cells by conventional C-Vor charge pumping techniques is hardly possible due to the extremely small gate area. However, 1/f noise measurements can be done since low frequency 1/f noise in the range around 1 Hz produced by stress-generated oxide traps strongly increases in MOSFETs with shrinking area. Here we show that measurements of the noise power spectral density enable the investigation of the degradation of the devices caused by hot carrier stress during write/erase cycling. In particular, we demonstrate that the oxide trap generation of a multi-bit cell like the Twin-FlashTM cell is mainly located at the stressed bit region.
{"title":"1/f Noise Analysis of a 75 nm Twin-Flash Technology Non-Volatile Memory Cell","authors":"G. Krause, K. Hofmann, M. F. Beug, T. Muller","doi":"10.1109/NVMT.2006.378867","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378867","url":null,"abstract":"Analyzing the electrical degradation of modern flash memory cells by conventional C-Vor charge pumping techniques is hardly possible due to the extremely small gate area. However, 1/f noise measurements can be done since low frequency 1/f noise in the range around 1 Hz produced by stress-generated oxide traps strongly increases in MOSFETs with shrinking area. Here we show that measurements of the noise power spectral density enable the investigation of the degradation of the devices caused by hot carrier stress during write/erase cycling. In particular, we demonstrate that the oxide trap generation of a multi-bit cell like the Twin-FlashTM cell is mainly located at the stressed bit region.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128733939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378881
L. P. Shi, T. Chong, X. Wei, R. Zhao, W.J. Wang, H.X. Yang, H.K. Lee, J.M. Li, N. Y. Yeo, K. G. Lim, X. Miao, W. Song
Understanding of the phase change in nano-scale, or so-called nano-phase change, and its related issues are important for its applications on both optical recording and phase change random access memory (PCRAM). Nano-phase change can be classified into thickness-dependent and structure dependent types. For PCRAM device performance, the film thickness-dependent thermal profile and materials' properties are the two important factors. In this work, the thickness dependence of nano-phase change for chalcogenide materials was studied by both simulation and experiments. A thermal model was built up to simulate the film thickness-dependent thermal profiles and its corresponding effects of line type PCRAM. The simulation results showed that the temperature profile, heating rate and cooling rate are strongly dependent on the thickness of phase change materials. Experiments had been conducted to investigate the thickness dependence of crystallization temperature for both nucleation-dominated and growth-dominated phase change material. It was found that the crystallization temperatures are function of the thickness for the both materials. Higher crystallization temperatures were obtained for thinner phase change films. The influence of above factors on the performance of PCRAM devices is discussed.
{"title":"Investigation of Nano-Phase Change for Phase Change Random Access Memory","authors":"L. P. Shi, T. Chong, X. Wei, R. Zhao, W.J. Wang, H.X. Yang, H.K. Lee, J.M. Li, N. Y. Yeo, K. G. Lim, X. Miao, W. Song","doi":"10.1109/NVMT.2006.378881","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378881","url":null,"abstract":"Understanding of the phase change in nano-scale, or so-called nano-phase change, and its related issues are important for its applications on both optical recording and phase change random access memory (PCRAM). Nano-phase change can be classified into thickness-dependent and structure dependent types. For PCRAM device performance, the film thickness-dependent thermal profile and materials' properties are the two important factors. In this work, the thickness dependence of nano-phase change for chalcogenide materials was studied by both simulation and experiments. A thermal model was built up to simulate the film thickness-dependent thermal profiles and its corresponding effects of line type PCRAM. The simulation results showed that the temperature profile, heating rate and cooling rate are strongly dependent on the thickness of phase change materials. Experiments had been conducted to investigate the thickness dependence of crystallization temperature for both nucleation-dominated and growth-dominated phase change material. It was found that the crystallization temperatures are function of the thickness for the both materials. Higher crystallization temperatures were obtained for thinner phase change films. The influence of above factors on the performance of PCRAM devices is discussed.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123841634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378882
S. Kikuchi, D. Oh, I. Kimura, Y. Nishioka, M. Ueda, M. Endo, Y. Kokaze, K. Suu
We prepared oxygen-doped and nitrogen-doped Ge-Sb-Te system thin film by RF magnetron sputtering, and investigated its crystallinity and resistivity with several annealing temperature and oxygen and nitrogen doping content. The test phase change device was fabricated to confirm switching characteristics between crystalline (set) and amorphous (reset) phases. The resistance of nitrogen-doped GST changed gradually and oxygen-doped GST shows a rapid resistance change with annealing temperature, since nitrogen-doped GST fee phase was held to high temperature as compared with the phase transition from fee to hep in oxygen-doped GST.
{"title":"Preparation of Oxygen-doped and Nitrogen-doped Ge-Sb-Te System Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering","authors":"S. Kikuchi, D. Oh, I. Kimura, Y. Nishioka, M. Ueda, M. Endo, Y. Kokaze, K. Suu","doi":"10.1109/NVMT.2006.378882","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378882","url":null,"abstract":"We prepared oxygen-doped and nitrogen-doped Ge-Sb-Te system thin film by RF magnetron sputtering, and investigated its crystallinity and resistivity with several annealing temperature and oxygen and nitrogen doping content. The test phase change device was fabricated to confirm switching characteristics between crystalline (set) and amorphous (reset) phases. The resistance of nitrogen-doped GST changed gradually and oxygen-doped GST shows a rapid resistance change with annealing temperature, since nitrogen-doped GST fee phase was held to high temperature as compared with the phase transition from fee to hep in oxygen-doped GST.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131166810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378880
J.M. Li, L. P. Shi, H.X. Yang, K. G. Lim, X. Miao, H.K. Lee, T. Chong
An integrated software for analysis and design of PCRAM cells has been developed. The research focuses on the discussion on electric-thermal -mechanical analyses. The software involves in the materials, geometrical and layer structure design and electric pulse strategy. It aims to provide a powerful tool for structure optimization and failure analysis of PCRAM cells.
{"title":"Integrated Analysis and Design of Phase-Change Random Access Memory (PCRAM) Cells","authors":"J.M. Li, L. P. Shi, H.X. Yang, K. G. Lim, X. Miao, H.K. Lee, T. Chong","doi":"10.1109/NVMT.2006.378880","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378880","url":null,"abstract":"An integrated software for analysis and design of PCRAM cells has been developed. The research focuses on the discussion on electric-thermal -mechanical analyses. The software involves in the materials, geometrical and layer structure design and electric pulse strategy. It aims to provide a powerful tool for structure optimization and failure analysis of PCRAM cells.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121703779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/NVMT.2006.378877
J. Im, Boon Ang, S. Tumakha, S. Paak
NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions. Controlled electromigration of Ni during fuse program was identified as a key factor in achieving reliably high post-program fuse resistance.
{"title":"Characterization of Silicided Polysilicon Fuse Implemented in 65nm Logic CMOS Technology","authors":"J. Im, Boon Ang, S. Tumakha, S. Paak","doi":"10.1109/NVMT.2006.378877","DOIUrl":"https://doi.org/10.1109/NVMT.2006.378877","url":null,"abstract":"NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions. Controlled electromigration of Ni during fuse program was identified as a key factor in achieving reliably high post-program fuse resistance.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128242905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：