PROBABILISTIC-PHYSICAL MODEL OF GAN:SI RADIATION RECOMBINATION SPECTRA LONG-TERM EVOLUTION DUE TO MICROWAVE RADIATION, WEAK MAGNETIC FIELD AND ELECTRON RADIATION TREATMENTS

Abstract

The influence of microwave radiation (MR) (2.45 GHz), weak magnetic field (WMF) (60 mT) and electron radiation (ER) (4 MeV) treatments on processes of defects reorganization in near-surface layers of GaN:Si have been studied. Long-term processes of photoluminescence spectra transformations after MR, WMF and ER treatments have been modeled. Our approximation assumes that evolution processes in the defect subsystem of a crystal are random events, and distribution of the random value – the time before a random event – is a subject to the Weibull-Gnedenko law. Qualitative and quantitative agreements between experimental data and theoretical models of long-term observed changes caused by noted treatments have been obtained. According to the proposed approach, the same mechanism could be applied for explanation long-term reorganizations after noted treatments semiconductor material. Moreover, this approach enables to explain non-monotonous behavior of photoluminescence spectra after MF, WMF and ER treatments and could be applied to prediction the consequences of noted actions. Keywords: Microwave radiation, weak magnetic field, electron radiation, photoluminescence, gallium nitride.