{"title":"256Kb CMNOS EPROM","authors":"Te-Long Chiu, Tsung-Ching Wu, G. Perlegos","doi":"10.1109/ISSCC.1984.1156664","DOIUrl":null,"url":null,"abstract":"A 125ns, 50mW 256Kb EPROM featuring 12V-16V programming will be described. The design utilizes a 1.5μm N-well CMOS on epi technology resulting In a cell size of 37.5μm<sup>2</sup>and a die size of 180 mil ×180 mil.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1984.1156664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A 125ns, 50mW 256Kb EPROM featuring 12V-16V programming will be described. The design utilizes a 1.5μm N-well CMOS on epi technology resulting In a cell size of 37.5μm2and a die size of 180 mil ×180 mil.
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