Memristor Dynamics Enabled Computing

Yuchao Yang
{"title":"Memristor Dynamics Enabled Computing","authors":"Yuchao Yang","doi":"10.1109/EDTM53872.2022.9798267","DOIUrl":null,"url":null,"abstract":"Since the connection of the theoretical memristor concept with physical resistive switching devices in 2008, tremendous progress has been made in terms of material and device technology developments and their applications in memory and computing systems. The physical embodiments of memristors correspond to various resistive switching devices based on different mechanisms. These mechanisms endow the memristors with rich nonlinear dynamics, which is key to constructing biologically plausible dynamic computing systems. Memristor can be described as a set of differential equations that indicate how the internal state variables determine device characteristics and how external electrical stimulations influence these state variables. The increases in the number of state variables and internal dynamics have dramatically enriched the dynamics and functionality of memristors. Further exploration and control of such dynamics are essential for highly efficient information processing applications.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM53872.2022.9798267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Since the connection of the theoretical memristor concept with physical resistive switching devices in 2008, tremendous progress has been made in terms of material and device technology developments and their applications in memory and computing systems. The physical embodiments of memristors correspond to various resistive switching devices based on different mechanisms. These mechanisms endow the memristors with rich nonlinear dynamics, which is key to constructing biologically plausible dynamic computing systems. Memristor can be described as a set of differential equations that indicate how the internal state variables determine device characteristics and how external electrical stimulations influence these state variables. The increases in the number of state variables and internal dynamics have dramatically enriched the dynamics and functionality of memristors. Further exploration and control of such dynamics are essential for highly efficient information processing applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
忆阻器动态使能计算
自2008年将理论忆阻器概念与物理阻性开关器件联系起来以来,材料和器件技术的发展及其在存储和计算系统中的应用取得了巨大进展。忆阻器的物理实施例对应于基于不同机制的各种电阻开关器件。这些机制赋予忆阻器丰富的非线性动力学特性,是构建生物学上合理的动态计算系统的关键。忆阻器可以被描述为一组微分方程,这些微分方程表明内部状态变量如何决定器件特性以及外部电刺激如何影响这些状态变量。状态变量和内部动力学的增加极大地丰富了忆阻器的动力学和功能。进一步探索和控制这种动态对于高效的信息处理应用是必不可少的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Potential of diamond solid-state quantum sensors Two-Dimensional Borides Discovery High-to-Low Flippling (HLF) Coding Strategy in Triple-levell-cell (TLC) 3D NAND Flash Memory to Construct Reliable Image Storages Surface Modulation of SiGe by Hydrogen Plasma Process with Site Exchange Mechanism between Si and Ge Area-efficient Power-rail ESD Clamp Circuit with False-trigger Immunity in 28nm CMOS Process
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1