{"title":"Vacuum microelectronic electron emitter by InP double barrier diode toward RF application","authors":"Y. Miyamoto, M. Kurita, K. Furuya","doi":"10.1109/DRC.2000.877086","DOIUrl":null,"url":null,"abstract":"In this paper, the possibility of high-speed vacuum microelectronic devices is discussed. As a field emitter is limited by the charging time, an electron emitter using the internal field in a semiconductor has been proposed. With a view toward the development of a semiconductor electron emitter, preliminary results for an InP double barrier emitter are presented. The observed efficiency was about 10/sup -3/ without surface treatment.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2000.877086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper, the possibility of high-speed vacuum microelectronic devices is discussed. As a field emitter is limited by the charging time, an electron emitter using the internal field in a semiconductor has been proposed. With a view toward the development of a semiconductor electron emitter, preliminary results for an InP double barrier emitter are presented. The observed efficiency was about 10/sup -3/ without surface treatment.
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