{"title":"Lateral field enhanced band-trap-band tunneling current in a 0.5/spl mu/m \"OFF\" state MOSFET","authors":"T. Wang, C. Huang, T. Chang, J. Chou, C. Chang","doi":"10.1109/DRC.1994.1009422","DOIUrl":null,"url":null,"abstract":"considerable interest. In this work, we develop an interface trap assisted two-step tunneling model in n-MOSFET's, which includes hole tunneling from interface traps to the valence band and electron tunneling from interface traps to the conduction band. In our model, the electron occupation factor of the interface traps &(E) is equated below since for the number of trapped electrons in the interface traps is unchanged in steady state. Recently, the effect of a ot carrier stress generated interface traps on GIDL has received","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1994.1009422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
considerable interest. In this work, we develop an interface trap assisted two-step tunneling model in n-MOSFET's, which includes hole tunneling from interface traps to the valence band and electron tunneling from interface traps to the conduction band. In our model, the electron occupation factor of the interface traps &(E) is equated below since for the number of trapped electrons in the interface traps is unchanged in steady state. Recently, the effect of a ot carrier stress generated interface traps on GIDL has received
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