Design and performance evaluation of a low transistor ternary CNTFET SRAM cell

Abstract

Carbon Nanotube Field-Effect Transistor (CNTFET) has proved to be a promising alternative to conventional CMOS design owing to the better electrostatic control and high mobility. The paper presents a novel design of 10 Transistor ternary memory cell, with separate read and write lines. Extensive HSPICE simulations have validated the read-write functionality of the design. Besides a significant reduction in transistor count, results show at least 45% reduction in delay as compared to prevalent memory cell designs.