P. Oldiges, Chen Zhang, Xin He Miao, M. Kang, T. Yamashita
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引用次数: 1
Abstract
A simple inline measurement technique for extracting the individual resistance components of the source, drain, and channel on a single MOSFET device using DC measurements is proposed. Modeling data is used to prove the efficacy of the technique. This method can be applied to symmetric or asymmetric devices.
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