R. Kinder, R. Srnánek, J. Walachová, L. Hulényi, M. Tlaczala, B. Ściana, D. Radziewicz
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Abstract
Determination of doping concentration profiles of GaAs on a bevelled surface by the probe method is presented. The bevelled structures were prepared by chemical etching. The results are compared with electrochemical capacitance-voltage technique. Some specific problems are discussed.
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