MEMS resonators that are robust to process-induced feature width variations

Rong Liu, B. Paden, K. Turner
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引用次数: 69

Abstract

In this paper, a frequency stability analysis and design method for MEMS resonators is presented. The frequency characteristics of a laterally vibrating resonator are analyzed. With the fabrication error on the sidewall of the structure being considered, the first and second order frequency sensitivities to the fabrication error are derived. A simple relationship between the proof mass area and perimeter, and the beam width, is developed for single material structures, which expresses that the proof mass perimeter times the beam width should equal six times the area of the proof mass. Design examples are given for the single material and multi-layer structures. The results and principles presented in the paper can be used to analyze and design other MEMS resonators.
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对工艺诱导的特征宽度变化具有鲁棒性的MEMS谐振器
本文提出了一种MEMS谐振器的频率稳定性分析和设计方法。分析了横向振动谐振器的频率特性。考虑结构侧壁的制造误差,推导了一阶和二阶频率对制造误差的灵敏度。对于单一材料结构,建立了证明质量面积、周长和梁宽之间的简单关系,表示证明质量周长乘以梁宽应等于证明质量面积的6倍。给出了单材料和多层结构的设计实例。本文的研究结果和原理可用于其他MEMS谐振器的分析和设计。
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