Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD

Alexander Scharinger, P. Manstetten, A. Hössinger, J. Weinbub
{"title":"Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD","authors":"Alexander Scharinger, P. Manstetten, A. Hössinger, J. Weinbub","doi":"10.23919/SISPAD49475.2020.9241615","DOIUrl":null,"url":null,"abstract":"A key part of advanced three-dimensional feature scale etching and deposition simulations is calculating the particle flux distributions. The most commonly applied flux calculation approach is top-down Monte Carlo which, however, introduces numerical noise. In principal, this noise can be reduced by increasing the number of simulated particles but doing so also increases the overall running time. For complex geometries, especially high aspect ratio structures, which are very prominent in state of the art three-dimensional electronic device designs, increasing the number of samples is not a viable approach: Only a very small subset of simulated particles contributes to reducing the noise in remote and obscured surface regions. We thus propose an adaptive importance sampling approach based on a generative model to more efficiently focus the sampling on those surface regions with high noise levels. We show that, for a constant number of simulated particles, our approach reduces the noise levels in the calculated flux by about 33% for a representative high aspect ratio test structure.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A key part of advanced three-dimensional feature scale etching and deposition simulations is calculating the particle flux distributions. The most commonly applied flux calculation approach is top-down Monte Carlo which, however, introduces numerical noise. In principal, this noise can be reduced by increasing the number of simulated particles but doing so also increases the overall running time. For complex geometries, especially high aspect ratio structures, which are very prominent in state of the art three-dimensional electronic device designs, increasing the number of samples is not a viable approach: Only a very small subset of simulated particles contributes to reducing the noise in remote and obscured surface regions. We thus propose an adaptive importance sampling approach based on a generative model to more efficiently focus the sampling on those surface regions with high noise levels. We show that, for a constant number of simulated particles, our approach reduces the noise levels in the calculated flux by about 33% for a representative high aspect ratio test structure.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于生成模型的自适应重要性抽样工艺TCAD通量计算
先进的三维特征尺度蚀刻与沉积模拟的关键部分是粒子通量分布的计算。最常用的磁通计算方法是自顶向下的蒙特卡罗方法,但该方法引入了数值噪声。原则上,可以通过增加模拟粒子的数量来减少这种噪声,但这样做也会增加总体运行时间。对于复杂的几何形状,特别是高纵横比结构,这在最先进的三维电子器件设计中非常突出,增加样本数量并不是一种可行的方法:只有很小一部分模拟粒子有助于减少遥远和模糊表面区域的噪声。因此,我们提出了一种基于生成模型的自适应重要采样方法,以更有效地将采样集中在具有高噪声水平的表面区域上。我们表明,对于一定数量的模拟粒子,我们的方法将计算通量中的噪声水平降低了约33%,用于具有代表性的高纵横比测试结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Power Device Degradation Estimation by Machine Learning of Gate Waveforms Numerical Solution of the Constrained Wigner Equation Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation Framework Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS2 Nanoribbons
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1