Measuring SER by Neutron Irradiation Between Volatile SRAM-based and Nonvolatile Flash-based FPGAs

Yuya Kawano, Yuto Tsukita, J. Furuta, Kazutoshi Kobayashi
{"title":"Measuring SER by Neutron Irradiation Between Volatile SRAM-based and Nonvolatile Flash-based FPGAs","authors":"Yuya Kawano, Yuto Tsukita, J. Furuta, Kazutoshi Kobayashi","doi":"10.1109/radecs47380.2019.9745707","DOIUrl":null,"url":null,"abstract":"We implemented 50k-bit shift registers on SRAM-based and flash-based FPGAs to investigate their radiation hardness. As a result, soft error rates of flip flops on both FPGAs are around 40 FIT/Mbit. Mean time to failure (MTTF) in the SRAM-based one is $3.8 \\times 10^{7}$ hour/failure, while MTTF in flash-based one is $5.5 \\times 10^{9}$ hour/failure. Those results clearly show that in the SRAM-based FPGA must be rebooted or configuration memory must be refreshed much more frequently than the flash-based one.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"708 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We implemented 50k-bit shift registers on SRAM-based and flash-based FPGAs to investigate their radiation hardness. As a result, soft error rates of flip flops on both FPGAs are around 40 FIT/Mbit. Mean time to failure (MTTF) in the SRAM-based one is $3.8 \times 10^{7}$ hour/failure, while MTTF in flash-based one is $5.5 \times 10^{9}$ hour/failure. Those results clearly show that in the SRAM-based FPGA must be rebooted or configuration memory must be refreshed much more frequently than the flash-based one.
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用中子辐照测量挥发性sram和非挥发性flash fpga之间的SER
我们在基于sram和基于闪存的fpga上实现了50k位移位寄存器,以研究它们的辐射硬度。因此,两个fpga上触发器的软错误率都在40 FIT/Mbit左右。基于sram的平均故障时间(MTTF)为$3.8 \乘以10^{7}$小时/次,而基于flash的MTTF为$5.5 \乘以10^{9}$小时/次。这些结果清楚地表明,与基于闪存的FPGA相比,基于sram的FPGA必须重新启动或刷新配置内存的频率要高得多。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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