M. Kim, Huichu Liu, Karthik Swaminathan, Xueqing Li, S. Datta, V. Narayanan
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引用次数: 13
Abstract
III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high gm/IDS, uni-directional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.
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