Electro-thermal simulation of silicon carbide power modules

A. Akturk, N. Goldsman, S. Potbhare
{"title":"Electro-thermal simulation of silicon carbide power modules","authors":"A. Akturk, N. Goldsman, S. Potbhare","doi":"10.1109/SISPAD.2014.6931607","DOIUrl":null,"url":null,"abstract":"We report on our development of a Silicon Carbide Power System Computer Aided Design Tool to address the need for improved methodologies for developing next generation high efficiency power electronics using Silicon Carbide power devices. The first major achievement is to develop compact models for SiC power MOSFETs and to input these models into CoolCAD's SPICE-type simulator, CoolSPICE (the student version that is for simulating standard SPICE circuits is available online: http://coolcadelectronics.com/coolspice/), to facilitate SiC power circuits design. A second aspect of the work is to extract thermal models for SiC MOSFETs, dies, packages, printed circuit boards, and modules, and then input these thermal models into a thermal simulator for calculating temperature of electronic devices, circuits and modules.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We report on our development of a Silicon Carbide Power System Computer Aided Design Tool to address the need for improved methodologies for developing next generation high efficiency power electronics using Silicon Carbide power devices. The first major achievement is to develop compact models for SiC power MOSFETs and to input these models into CoolCAD's SPICE-type simulator, CoolSPICE (the student version that is for simulating standard SPICE circuits is available online: http://coolcadelectronics.com/coolspice/), to facilitate SiC power circuits design. A second aspect of the work is to extract thermal models for SiC MOSFETs, dies, packages, printed circuit boards, and modules, and then input these thermal models into a thermal simulator for calculating temperature of electronic devices, circuits and modules.
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碳化硅功率模块的电热模拟
我们报告了我们开发的碳化硅电力系统计算机辅助设计工具,以解决使用碳化硅功率器件开发下一代高效电力电子产品的改进方法的需求。第一个主要成就是为SiC功率mosfet开发紧凑型模型,并将这些模型输入CoolCAD的SPICE类型模拟器CoolSPICE(用于模拟标准SPICE电路的学生版本可在线获取:http://coolcadelectronics.com/coolspice/),以促进SiC功率电路的设计。工作的第二个方面是提取SiC mosfet、芯片、封装、印刷电路板和模块的热模型,然后将这些热模型输入到热模拟器中,用于计算电子器件、电路和模块的温度。
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