Analytical modeling of Hot Carrier Injection induced degradation in triple gate bulk FinFETs

Nayereh Ghobadi, A. Afzali-Kusha, E. Asl-Soleimani
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Abstract

In this paper, an analytical model for the HCI induced trap generation in the gate oxide and the degradation of a triple gate bulk FinFET is presented. The model which is obtained by solving the Reaction-Diffusion equations multi-dimensionally, includes the geometry dependence of the time-exponent of HCI degradation of the structure. In this framework, the electric field distribution and the maximum lateral electric field near the drain region are obtained through solving the Poisson's equation in the saturation region near the drain. Also, the nth power law MOS model is used to model the saturation current and its degradation. The accuracy of the HCI model is verified using experimental results.
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热载流子注入诱发三栅极体finfet退化的分析建模
本文提出了栅极氧化物中HCI诱导陷阱产生和三栅极体FinFET降解的解析模型。该模型通过对反应扩散方程进行多维求解得到,该模型考虑了结构HCI退化时间指数的几何依赖性。在此框架下,通过求解漏极附近饱和区域的泊松方程,得到了漏极附近的电场分布和最大侧向电场。同时,利用n次幂律MOS模型对饱和电流及其衰减进行了建模。实验结果验证了该模型的准确性。
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