C. Monier, A. Cavus, R. Sandhu, D. Li, P. Nam, B. Chan, A. Oshiro, D. Matheson, A. Gutierrez-Aitken
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引用次数: 2
Abstract
In bipolar logic circuits, the use of a narrow band gap Inx Ga1-xAs system with high indium content (80 < x < 100) materials in the base layer will primarily impact the device turn-on voltage VBE that could be reduced by half compared to conventional III-V technologies. This will directly translate to lower supply voltage in digital applications. This paper discusses device technology for bipolar circuit applications based on material systems with lattice parameter towards that of InAs
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