{"title":"Temperature Dependent Defect Level for an Ionic Failure Mechanism","authors":"R. S. Hemmert","doi":"10.1109/IRPS.1981.362991","DOIUrl":null,"url":null,"abstract":"On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.
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