Gunn Diode Pulse Thermal Resistance and Characterization Test System

Abstract

The thermal resistance test station provides a complete characterization of a GUNN diodes parameters. The output power, efficiency, frequency, power swept response, and thermal resistance measurements are made fast and accurately. The accuracy of present thermal resistance measurements of Ka-band GUNN diodes is ± 15%, better results are expected with the revised heating test. Measurement times of 2-3 minutes rather than 2-3 hours are required making it a production suitable method. The system expandability becomes apparent at the wafer level. The current versus voltage characteristics at ambient temperature may be able in distinguish between good and bad processed GaAs wafers. This will provide an obvious cost savings because inadequate wafers are withheld during processing or before packaging.