5.6 A 400×400-Pixel 6μm-Pitch Vertical Avalanche Photodiodes CMOS Image Sensor Based on 150ps-Fast Capacitive Relaxation Quenching in Geiger Mode for Synthesis of Arbitrary Gain Images
Y. Hirose, S. Koyama, T. Okino, Akito Inoue, S. Saito, Yugo Nose, M. Ishii, S. Yamahira, S. Kasuga, M. Mori, T. Kabe, K. Nakanishi, M. Usuda, A. Odagawa, Tsuyoshi Tanaka
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引用次数: 9
Abstract
The intensive development of Single-photon avalanche photodiode (SPAD) based CMOS image sensors (CIS) continues, with rapid progress [1–6]. Yet, due to unestablished quenching operation [5,6], realization of SPADs onto a CIS alongside conventional pixel circuitry has been a fundamental challenge.
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