{"title":"Tailoring anchor shape during release of MEMS microbeams using microfluidic flow","authors":"B. Cheah, A. Keating, J. Dell","doi":"10.1109/COMMAD.2012.6472366","DOIUrl":null,"url":null,"abstract":"Laminar flow assisted wet etching has been employed to control the sacrificial layer etch progression during the release of silicon nitride (SiNx) microbeams, on a porous silicon (PS) sacrificial layer. A removable 3-inlet polydi-methylsiloxane (PDMS) microfluidic cassette allowed different fluids to be passed over the sample surface to generate a fluid mask. In contrast to solid masking, microfluidic devices can provide non-homogeneous etching conditions which can be controlled in real-time. In this work device input flow rates were altered during the etch, allowing specific surfaces to be exposed to etchant, resulting in beams with asymmetric anchor configurations.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"237 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Laminar flow assisted wet etching has been employed to control the sacrificial layer etch progression during the release of silicon nitride (SiNx) microbeams, on a porous silicon (PS) sacrificial layer. A removable 3-inlet polydi-methylsiloxane (PDMS) microfluidic cassette allowed different fluids to be passed over the sample surface to generate a fluid mask. In contrast to solid masking, microfluidic devices can provide non-homogeneous etching conditions which can be controlled in real-time. In this work device input flow rates were altered during the etch, allowing specific surfaces to be exposed to etchant, resulting in beams with asymmetric anchor configurations.