A 112 μW F-band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection

Bart Philippe, P. Reynaert
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引用次数: 1

Abstract

This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a transmission line is detected at 312 probe locations to provide an accurate representation. Standing wave measurements are performed for differential amplitude and phase variations, demonstrating the potential for magnitude and angle detection. The minimum required RF input power is −25 dBm. The detector is implemented in a 40nm bulk CMOS technology operating from 96–to–140 GHz, while only consuming 112 μW of DC power with a 0.287 mm2 active occupied area.
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用于传感和阻抗检测的112 μW f波段驻波检测器
本文介绍了一种用于f波段传感的集成驻波探测器。在312个探头位置检测传输线上的驻波,以提供准确的表示。驻波测量进行了差分振幅和相位变化,展示了幅度和角度检测的潜力。要求的最小射频输入功率为- 25dbm。该探测器采用40nm块体CMOS技术实现,工作频率为96 - 140 GHz,仅消耗112 μW直流功率,有效占用面积为0.287 mm2。
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