J. Lorenz, E. Bar, A. Burenkov, P. Evanschitzky, A. Asenov, L. Wang, X. Wang, A. Brown, C. Millar, D. Reid
{"title":"Simultaneous simulation of systematic and stochastic process variations","authors":"J. Lorenz, E. Bar, A. Burenkov, P. Evanschitzky, A. Asenov, L. Wang, X. Wang, A. Brown, C. Millar, D. Reid","doi":"10.1109/SISPAD.2014.6931620","DOIUrl":null,"url":null,"abstract":"An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third-party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third-party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.
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