{"title":"A large signal model for a GaInP/GaAs HBT","authors":"M. J. Kelly, J. Stewart, A. Patterson","doi":"10.1109/EDMO.1995.493697","DOIUrl":null,"url":null,"abstract":"A large signal model for a GaInP/GaAs Heterojunction Bipolar Transistor is presented. The proposed model is a lumped element hybrid-pi topology. The extrinsic elements are determined using direct extraction techniques and the intrinsic elements are obtained from a combination of mainly direct small signal extraction and optimisation. The dc transfer characteristics are modelled using a V/sub ce/ dependent function where the constants of the equation are made to vary with base current I/sub b/. Allowances for the non uniform gain of the device are also included. The model gives good agreement between measured and modelled dc characteristics, s-parameters and power transfer characteristics. This model can be implemented on most up to date CAD packages, and has been generated over a range of devices.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A large signal model for a GaInP/GaAs Heterojunction Bipolar Transistor is presented. The proposed model is a lumped element hybrid-pi topology. The extrinsic elements are determined using direct extraction techniques and the intrinsic elements are obtained from a combination of mainly direct small signal extraction and optimisation. The dc transfer characteristics are modelled using a V/sub ce/ dependent function where the constants of the equation are made to vary with base current I/sub b/. Allowances for the non uniform gain of the device are also included. The model gives good agreement between measured and modelled dc characteristics, s-parameters and power transfer characteristics. This model can be implemented on most up to date CAD packages, and has been generated over a range of devices.
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