{"title":"Memristor crossbar arrays with junction areas towards sub-10 × 10 nm2","authors":"Shuang Pi, P. Lin, Q. Xia","doi":"10.1109/CNNA.2012.6331452","DOIUrl":null,"url":null,"abstract":"We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low operational current.","PeriodicalId":387536,"journal":{"name":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.2012.6331452","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low operational current.
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