{"title":"Structural, dielectric and electrical properties of Bi/K co-doped BaTiO3 ferroelectric ceramics","authors":"Preetisnigdha Sahu, R. Choudhary, S. Samal","doi":"10.1109/APSIT58554.2023.10201771","DOIUrl":null,"url":null,"abstract":"Lead-free ferroelectric ceramic (Ba0.8Bi0.1K0. 1) TiO3 prepared by conventional solid state synthesis route and well sintered at 1200 °C. The room-temperature x-ray diffraction and FESEM data analysis confirmed the phase structure, space group, lattice parameters, and microstructure. The dielectric properties in a wide frequency and temperature range show a fully temperature dependent dielectric constant (with transition at 184°C) and a very low dielectric loss at lower temperatures. The impedance investigation (Nyquist plot) demonstrates non-Debye type conduction, NTCR behavior, and grain and grain boundary contributions. Given the aforementioned traits, it can be used in the electronics industry.","PeriodicalId":170044,"journal":{"name":"2023 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 International Conference in Advances in Power, Signal, and Information Technology (APSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APSIT58554.2023.10201771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Lead-free ferroelectric ceramic (Ba0.8Bi0.1K0. 1) TiO3 prepared by conventional solid state synthesis route and well sintered at 1200 °C. The room-temperature x-ray diffraction and FESEM data analysis confirmed the phase structure, space group, lattice parameters, and microstructure. The dielectric properties in a wide frequency and temperature range show a fully temperature dependent dielectric constant (with transition at 184°C) and a very low dielectric loss at lower temperatures. The impedance investigation (Nyquist plot) demonstrates non-Debye type conduction, NTCR behavior, and grain and grain boundary contributions. Given the aforementioned traits, it can be used in the electronics industry.