Chun Yang, Xiaojie Xu, Haiyan Lu, Jixin Chen, Debin Hou
{"title":"A Broadband E-band Driver Amplifier in 0.1 μm GaAs pHEMT Technology","authors":"Chun Yang, Xiaojie Xu, Haiyan Lu, Jixin Chen, Debin Hou","doi":"10.1109/IWS55252.2022.9977451","DOIUrl":null,"url":null,"abstract":"A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–94 GHz). The saturated output power is greater than 15 dBm in the 3-dB bandwidth frequency range with a peak of 18.7 dBm at 75 GHz. The amplifier draws a 152 mA current with a supply voltage of 4 V and the size is 1.1x0.8 mm2 including pads. The results show that the pro-posed driver amplifier achieves competitive gain and remarkable bandwidth in E-band.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–94 GHz). The saturated output power is greater than 15 dBm in the 3-dB bandwidth frequency range with a peak of 18.7 dBm at 75 GHz. The amplifier draws a 152 mA current with a supply voltage of 4 V and the size is 1.1x0.8 mm2 including pads. The results show that the pro-posed driver amplifier achieves competitive gain and remarkable bandwidth in E-band.
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