A. Petrocchi, G. Crupi, V. Vadalà, G. Avolio, A. Raffo, D. Schreurs, A. Caddemi, G. Vannini
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引用次数: 3
Abstract
This study focuses on temperature dependent characterization of a 0.25×1500 μm2 GaN HEMT. The impact of the ambient temperature on the microwave performance is reported and discussed. It is achieved that the reduction of the average electron velocity with increasing temperature leads to a remarkably degradation of the main figures of merit.
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