A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs

S. Duffy, B. Benbakhti, W. Zhang, K. Kalna, K. Ahmeda, M. Boucherta, N. Bourzgui, H. Maher, A. Soltani
{"title":"A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs","authors":"S. Duffy, B. Benbakhti, W. Zhang, K. Kalna, K. Ahmeda, M. Boucherta, N. Bourzgui, H. Maher, A. Soltani","doi":"10.23919/EUMIC.2018.8539935","DOIUrl":null,"url":null,"abstract":"The source/drain and gate induced charge trapping within an AIGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measurement of current transients of both source and drain terminals, a characterisation technique has been developed to: (i) analyse the transient current degradations from μS to seconds, and (ii) evaluate the drain and gate induced charge trapping mechanisms. Two degradation mechanisms of current are observed: bulk trapping at a short time <1ms); and surface trapping and redistribution (>lms). The bulk charge trapping is found to occur during both ON and OFF states of the device when Vns>0V; where its trapping time constant is independent of bias conditions. In addition, the time constant of the slower current degradation is found to be mainly dependent on surface trapping and redistribution, not by the second heat transient.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The source/drain and gate induced charge trapping within an AIGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measurement of current transients of both source and drain terminals, a characterisation technique has been developed to: (i) analyse the transient current degradations from μS to seconds, and (ii) evaluate the drain and gate induced charge trapping mechanisms. Two degradation mechanisms of current are observed: bulk trapping at a short time <1ms); and surface trapping and redistribution (>lms). The bulk charge trapping is found to occur during both ON and OFF states of the device when Vns>0V; where its trapping time constant is independent of bias conditions. In addition, the time constant of the slower current degradation is found to be mainly dependent on surface trapping and redistribution, not by the second heat transient.
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AIGaN/GaN hemt的源极和漏极瞬态电流表征技术
本文首次在排除自热效应的情况下,研究了AIGaN/GaN高电子迁移率晶体管的源极/漏极和栅极感应电荷捕获。通过直接测量源极和漏极的瞬态电流,开发了一种表征技术:(i)分析瞬态电流从μS到秒的衰减,(ii)评估漏极和栅极诱导电荷捕获机制。观察到电流的两种降解机制:短时间内的大块捕获(lms)。当Vns>0V时,在器件的ON和OFF状态均发生大量电荷捕获;其中其俘获时间常数与偏置条件无关。此外,发现较慢的电流降解的时间常数主要依赖于表面捕获和重新分配,而不是由第二次热瞬态。
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