Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux

Abstract

Monte Carlo simulation of GaAs nanowires MBE pulse growth was carried out. The arsenic flux pulse durations and the pauses between pulses were analyzed for optimizing growth conditions. To increase the axial wire growth rate at the initial stage the regime of additional arsenic flux modulation was considered. Growth in a high arsenic flux was proposed to start and stepwise reduce it during the growth process. This approach made it possible to increase the lifetime of a seed droplet at the nanowire top at a high crystal growth rate at the initial stage of growth.