{"title":"Features of thin film CVD processes used in IC device technology","authors":"V. Vasilyev","doi":"10.1109/EDM.2009.5173942","DOIUrl":null,"url":null,"abstract":"Basic film step coverage and gap-fill data has been consolidated and compared with the observed thin film CVD kinetics trends. Based on some assumptions regarding reaction kinetics, obtained correlations are believed to be applicable for an optimization of ultra small gap filling in deep submicron Integrated Circuit technology.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Basic film step coverage and gap-fill data has been consolidated and compared with the observed thin film CVD kinetics trends. Based on some assumptions regarding reaction kinetics, obtained correlations are believed to be applicable for an optimization of ultra small gap filling in deep submicron Integrated Circuit technology.
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