On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs

A. Koukab, O. Amiri
{"title":"On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs","authors":"A. Koukab, O. Amiri","doi":"10.1109/SIRF.2012.6160136","DOIUrl":null,"url":null,"abstract":"This paper presents a theoretical study of CMOS differential Colpitts VCOs. The objective is to provide a deep understanding of the different mechanisms that impact the performances of these VCOs, namely the Gm-boosting and cyclostationary noise. The developed methodology and expressions can be used to analyze, optimize and build new VCO topologies. A novel topology with an optimized gate to source (GS) feedback is proposed. It exhibits a figure of merit (FOM) better than -190 dBc/Hz/mW for all the frequency offsets.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2012.6160136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This paper presents a theoretical study of CMOS differential Colpitts VCOs. The objective is to provide a deep understanding of the different mechanisms that impact the performances of these VCOs, namely the Gm-boosting and cyclostationary noise. The developed methodology and expressions can be used to analyze, optimize and build new VCO topologies. A novel topology with an optimized gate to source (GS) feedback is proposed. It exhibits a figure of merit (FOM) better than -190 dBc/Hz/mW for all the frequency offsets.
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低压CMOS差分柯氏压控振荡器的gm升压和周期平稳噪声机制研究
本文对CMOS差分柯氏压控振荡器进行了理论研究。目的是深入了解影响这些vco性能的不同机制,即gm增强和周期平稳噪声。所开发的方法和表达式可用于分析、优化和构建新的VCO拓扑。提出了一种具有优化门源反馈的新型拓扑结构。在所有频率偏置下,其性能值(FOM)均优于-190 dBc/Hz/mW。
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