Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160156
T. Monti, A. di Donato, M. Farina
In this work, we describe the application of an in-house system performing simultaneously Scanning Tunneling Microscopy (STM) and wide-band Near Field Scanning Microwave Microscopy (wide-band SMM) to a few-layer graphene sample. This sample is produced by mechanical exfoliation of bulk highly oriented graphite and deposited on a substrate of conductive glass. By introducing the time-domain conversion of frequency domain data, we show that it is possible to achieve nanometric resolution.
{"title":"High resolution imaging of few-layer graphene by Near-Field Scanning Microwave Microscopy","authors":"T. Monti, A. di Donato, M. Farina","doi":"10.1109/SIRF.2012.6160156","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160156","url":null,"abstract":"In this work, we describe the application of an in-house system performing simultaneously Scanning Tunneling Microscopy (STM) and wide-band Near Field Scanning Microwave Microscopy (wide-band SMM) to a few-layer graphene sample. This sample is produced by mechanical exfoliation of bulk highly oriented graphite and deposited on a substrate of conductive glass. By introducing the time-domain conversion of frequency domain data, we show that it is possible to achieve nanometric resolution.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125782747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160120
Y. Mao, K. Schmalz, J. Borngraber, J. Scheytt
The paper presents a four stage 245 GHz LNA in an ft/fmax=280/425 GHz SiGe technology and a 4th sub harmonic 245 GHz transconductance mixer in an ft/fmax=250/300 GHz SiGe technology. The LNA takes advantage of common base (CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results of the receiver comprising the CB LNA and SHM mixer are given.
{"title":"A 245 GHz CB LNA and SHM mixer in SiGe technology","authors":"Y. Mao, K. Schmalz, J. Borngraber, J. Scheytt","doi":"10.1109/SIRF.2012.6160120","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160120","url":null,"abstract":"The paper presents a four stage 245 GHz LNA in an ft/fmax=280/425 GHz SiGe technology and a 4th sub harmonic 245 GHz transconductance mixer in an ft/fmax=250/300 GHz SiGe technology. The LNA takes advantage of common base (CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results of the receiver comprising the CB LNA and SHM mixer are given.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"253 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114546003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160159
M. Mahani, R. Abhari
A passive low-pass filter on CMOS 130nm process is presented in this paper. The filter has an elliptic transfer function to give the sharpest out of band rejection with the lowest order. The bandwidth of the filter is from DC to 6GHz which makes it applicable to wide band zero IF receiver architectures. The filter has a balanced implementation in order to be integrated with a balanced mixer and shows 18 dB insertion loss at 7.7GHz. Full-wave simulations of the layout are presented together with the measurement results and show excellent agreement.
{"title":"A DC to 6 GHz balanced elliptic low-pass filter in CMOS 130nm technology","authors":"M. Mahani, R. Abhari","doi":"10.1109/SIRF.2012.6160159","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160159","url":null,"abstract":"A passive low-pass filter on CMOS 130nm process is presented in this paper. The filter has an elliptic transfer function to give the sharpest out of band rejection with the lowest order. The bandwidth of the filter is from DC to 6GHz which makes it applicable to wide band zero IF receiver architectures. The filter has a balanced implementation in order to be integrated with a balanced mixer and shows 18 dB insertion loss at 7.7GHz. Full-wave simulations of the layout are presented together with the measurement results and show excellent agreement.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122122793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160118
C. Poh, R. Schmid, J. Cressler, J. Papapolymerou
This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak fT silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.
{"title":"An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs","authors":"C. Poh, R. Schmid, J. Cressler, J. Papapolymerou","doi":"10.1109/SIRF.2012.6160118","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160118","url":null,"abstract":"This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak fT silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128225324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160163
Pei Shen, G. Niu, Ziyan Xu, Wanrong Zhang
This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption.
{"title":"Impact of high frequency correlated noise on SiGe HBT low noise amplifier design","authors":"Pei Shen, G. Niu, Ziyan Xu, Wanrong Zhang","doi":"10.1109/SIRF.2012.6160163","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160163","url":null,"abstract":"This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121389701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160155
M. Arshad, M. Emam, V. Kilchystka, F. Andrieu, D. Flandre, J. Raskin
RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency fT and maximum oscillation frequency fmax of 160 GHz and 143 GHz, respectively, are demonstrated. Based on an accurate extraction of the small-signal equivalent circuit of UTBB MOSFET over a wide frequency range, it is revealed that ground plane (GP) implementation (i.e. highly-doped region underneath the BOX)does not increase the high frequency parasitic capacitances, and thus does not degrade the RF performance of UTBB devices.
{"title":"RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs","authors":"M. Arshad, M. Emam, V. Kilchystka, F. Andrieu, D. Flandre, J. Raskin","doi":"10.1109/SIRF.2012.6160155","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160155","url":null,"abstract":"RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency fT and maximum oscillation frequency fmax of 160 GHz and 143 GHz, respectively, are demonstrated. Based on an accurate extraction of the small-signal equivalent circuit of UTBB MOSFET over a wide frequency range, it is revealed that ground plane (GP) implementation (i.e. highly-doped region underneath the BOX)does not increase the high frequency parasitic capacitances, and thus does not degrade the RF performance of UTBB devices.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"6 Suppl 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132524381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160167
Mau-Chung Frank Chang
The talk will describe the principle in design and implementation of artificial dielectric with digitally controlled permittivity by using periodic metal strips and active CMOS switches under differential microwave transmission lines in deep-scaled standard CMOS process. The talk will also address its demonstrated circuit/system applications by using implemented digitally controlled artificial dielectric (DiCAD) in direct carrier signal modulation and broadband frequency synthesis for high linearity/efficiency power amplifications. We will also discuss its potentials and limitations in realizing multi-band and software defined microwave/mm-wave radios with dynamic/agile band/mode selection capabilities.
{"title":"Synthesizing artificial dielectric in CMOS with digitally controlled permittivity for Radio-on-a-chip applications","authors":"Mau-Chung Frank Chang","doi":"10.1109/SIRF.2012.6160167","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160167","url":null,"abstract":"The talk will describe the principle in design and implementation of artificial dielectric with digitally controlled permittivity by using periodic metal strips and active CMOS switches under differential microwave transmission lines in deep-scaled standard CMOS process. The talk will also address its demonstrated circuit/system applications by using implemented digitally controlled artificial dielectric (DiCAD) in direct carrier signal modulation and broadband frequency synthesis for high linearity/efficiency power amplifications. We will also discuss its potentials and limitations in realizing multi-band and software defined microwave/mm-wave radios with dynamic/agile band/mode selection capabilities.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133900983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160148
F. Starzer, H. Forstner, L. Maurer, A. Stelzer
Commercially available integrated radar sensor solutions are at a hard limit of distending their thermal budget. A current-reuse topology of a combined Colpitt's voltage controlled oscillator and a Gilbert-cell based mixer aimed at radar sensor applications is presented. In addition to that frequency dividers and phase locked-loop components complete the design to take effect of PLL application. In comparison to a conventional cascaded block design with even less functionality, the circuit gains 55% in energy consumption at neglectable performance losses.
{"title":"A 21-GHz self-oscillating down-converter mixer","authors":"F. Starzer, H. Forstner, L. Maurer, A. Stelzer","doi":"10.1109/SIRF.2012.6160148","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160148","url":null,"abstract":"Commercially available integrated radar sensor solutions are at a hard limit of distending their thermal budget. A current-reuse topology of a combined Colpitt's voltage controlled oscillator and a Gilbert-cell based mixer aimed at radar sensor applications is presented. In addition to that frequency dividers and phase locked-loop components complete the design to take effect of PLL application. In comparison to a conventional cascaded block design with even less functionality, the circuit gains 55% in energy consumption at neglectable performance losses.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"55 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131875059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160125
B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel
In this publication an integrated reflectometer in SiGe BiCMOS technology for sensor readout at 62 GHz is presented. The circuit includes an oscillator, a six-port reflectometer, and a dummy sensor for verification purposes. The circuit has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V supply voltage and consumes 282 mW. The measurement principle is demonstrated and the scattering parameters of the dummy sensor are compared to measurement of a breakout circuit with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.9 mm2.
{"title":"A 62 GHz reflectometer for biomedical sensor readout in SiGe BiCMOS technology","authors":"B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel","doi":"10.1109/SIRF.2012.6160125","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160125","url":null,"abstract":"In this publication an integrated reflectometer in SiGe BiCMOS technology for sensor readout at 62 GHz is presented. The circuit includes an oscillator, a six-port reflectometer, and a dummy sensor for verification purposes. The circuit has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V supply voltage and consumes 282 mW. The measurement principle is demonstrated and the scattering parameters of the dummy sensor are compared to measurement of a breakout circuit with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.9 mm2.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121632910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-01DOI: 10.1109/SIRF.2012.6160122
Chun-Hsing Li, C. Kuo
This work presents a low power receiver front-end design for the 77 GHz radar application. The theoretical maximum achievable gains in the LNA and the mixer are derived by using energy conservation principle. It is shown that the maximum gain can be increased by raising the impedance ratio between stages. The impedance transformation is able to provide high passive gain without any power consumption. Moreover, the quality of the passive components plays a critical role to approach the maximum gain condition. Accordingly a low power receiver front-end is designed in 65 nm CMOS. The measured results show the highest gain of 33.7 dB at 73 GHz with 3 dB bandwidth from 67 GHz to 75 GHz. The input return loss, P1dB, IIP3, and NF at IF frequency of 8 MHz, are 16.4 dB, -32 dBm, -19 dBm, and 12.2 dB, respectively. The power consumption is only 16.9 mW from a 1 V supply. To the best of our knowledge, this work shows the highest gain while consumes the lowest power as compared to the prior works.
{"title":"16.9-mW 33.7-dB gain mmWave receiver front-end in 65 nm CMOS","authors":"Chun-Hsing Li, C. Kuo","doi":"10.1109/SIRF.2012.6160122","DOIUrl":"https://doi.org/10.1109/SIRF.2012.6160122","url":null,"abstract":"This work presents a low power receiver front-end design for the 77 GHz radar application. The theoretical maximum achievable gains in the LNA and the mixer are derived by using energy conservation principle. It is shown that the maximum gain can be increased by raising the impedance ratio between stages. The impedance transformation is able to provide high passive gain without any power consumption. Moreover, the quality of the passive components plays a critical role to approach the maximum gain condition. Accordingly a low power receiver front-end is designed in 65 nm CMOS. The measured results show the highest gain of 33.7 dB at 73 GHz with 3 dB bandwidth from 67 GHz to 75 GHz. The input return loss, P1dB, IIP3, and NF at IF frequency of 8 MHz, are 16.4 dB, -32 dBm, -19 dBm, and 12.2 dB, respectively. The power consumption is only 16.9 mW from a 1 V supply. To the best of our knowledge, this work shows the highest gain while consumes the lowest power as compared to the prior works.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123018829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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