{"title":"Low power sensor for temperature compensation in molecular biosensing","authors":"D. Venuto","doi":"10.1109/ISQED.2013.6523644","DOIUrl":null,"url":null,"abstract":"A low power smart temperature sensor followed by an SC amplifier and a 12bit Successive-Approximation analogue-digital converter (ADC) to compensate temperature deviation in drug electrochemical detection, is here presented. The proposed design is accurate within 0.1°C over the temperature range of -55°C to 125°C. A PTAT voltage is used for temperature monitoring. The succeeding ADC digitizes the output with a bit-clock of 50-kHz. The ADC has a Figure-of-Merit of 66 fJ/conversion-step. The system is implemented in an NXP CMOS 0.14μm technology. The die area is 0.21 mm2 and the whole system consumes less than 16μW for 1.2V of voltage supply.","PeriodicalId":127115,"journal":{"name":"International Symposium on Quality Electronic Design (ISQED)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2013.6523644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A low power smart temperature sensor followed by an SC amplifier and a 12bit Successive-Approximation analogue-digital converter (ADC) to compensate temperature deviation in drug electrochemical detection, is here presented. The proposed design is accurate within 0.1°C over the temperature range of -55°C to 125°C. A PTAT voltage is used for temperature monitoring. The succeeding ADC digitizes the output with a bit-clock of 50-kHz. The ADC has a Figure-of-Merit of 66 fJ/conversion-step. The system is implemented in an NXP CMOS 0.14μm technology. The die area is 0.21 mm2 and the whole system consumes less than 16μW for 1.2V of voltage supply.
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