Non-radiative recombination centers in AlGaN quantum well characterized by two-wavelength excited photoluminescence

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528678

M. Julkarnain, T. Fukuda, N. Kamata, H. Hirayama

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Abstract

Two-wavelength excited photoluminescence, a non-destructive and non-contacting method for defect study has been used to investigate the AlGaN multiple quantum well (MQW) emitting at ~260 nm. We have succeeded to detect the non-radiative recombination (NRR) centers in both wells and barrier layers using a below-gap ex- citation (BGE) light of 1.17 eV. The PL intensity of both well and barrier layers decreases after irradiation of BGE which can be explained by the well-established two-level model. The normalized PL intensity decreases with increasing BGE power density for both cases but more pronounced for the barrier layer. The normalized PL intensity increases for both well and barrier layer's emission with increasing AGE density and becomes saturated at higher excitation due to the fill-up of NRR centers.

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双波长激发光致发光表征了AlGaN量子阱中的非辐射复合中心

利用双波长激发光致发光技术研究了发光波长为~260 nm的AlGaN多量子阱(MQW)。利用1.17 eV的间隙下激发(BGE)光，我们成功地探测到了井和势垒层中的非辐射复合(NRR)中心。BGE辐照后，井层和势垒层的PL强度均下降，这可以用已建立的双能级模型来解释。两种情况下，归一化PL强度随BGE功率密度的增加而降低，但势垒层的归一化PL强度更明显。随着AGE密度的增加，井层和势垒层发射的归一化PL强度均增加，并在高激发下由于NRR中心的填充而达到饱和。

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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