Keonhee Cho, Gi-Kryang Kim, J. Oh, Kiryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, T. Song, Seong-ook Jung
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引用次数: 1
Abstract
This paper presents charge-recycling and charge self-saving techniques in SRAM that lower VMIN while consuming minimal read and write energies. The proposed techniques (with flying CVSS) achieve 250mV (270mV) VMIN improvements in 64-Kb SRAM using 0.080μm2 LV SRAM cell on 14-nm FinFET technology.
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