Demonstrating the Thermoradiative Diode: Generating Electrical Power Through Radiative Emission

M. Nielsen, Andreas Pusch, M. H. Sazzad, P. Pearce, P. Reece, N. Ekins‐Daukes
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Abstract

Thermoradiative power generation is achieved through the emission of light from a warm ambient into a cold surroundings representing a thermodynamically symmetric counterpart to photovoltaic solar power generation. The thermoradiative diode provides a semiconductor implementation of this process whereby radiative emission from a warm diode into a cold environment expels more entropy than supplied by the flow of heat to the diode, hence permitting work to be performed. Under these conditions a reverse bias spontaneously forms across the diode allowing an electrical current to flow and hence delivering electrical power. We report the full IV characteristics from a 0.3eV HgCdTe diode was held at 20.5C and exposed to a radiant surface of different temperatures. Thermoradiative power is generated when the diode faces a cold(< 20.5C surface) delivering a positive photocurrent and negative voltage. In the radiative limit, where all parasitic processes are eliminated, a thermoradiative diode exposed to the cold night sky could deliver electrical power densities of the order of tens of W/ m2, offering the tantalizing prospect of generating useful quantities of electrical power. The linear behaviour of our IV curves is consistent with Auger mediated generation and recombination processes that reduce the power density for currently available commercial diodes to mW/cm2.
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演示热辐射二极管:通过辐射发射发电
热辐射发电是通过将光从温暖的环境发射到寒冷的环境中来实现的,这代表了光伏太阳能发电的热力学对称对应。热辐射二极管提供了该过程的半导体实现,通过该过程,从热二极管到冷环境的辐射发射排出的熵比流向二极管的热流所提供的熵多,从而允许做功。在这些条件下,反向偏压自发形成横跨二极管允许电流流动,从而提供电力。我们报告了将0.3eV的HgCdTe二极管保持在20.5℃并暴露在不同温度的辐射表面上的完整IV特性。当二极管面对冷(< 20.5C表面)时,产生热辐射功率,提供正光电流和负电压。在辐射极限下,所有寄生过程都被消除,一个热辐射二极管暴露在寒冷的夜空中,可以提供几十W/ m2的功率密度,提供了产生有用电量的诱人前景。我们的IV曲线的线性行为与俄歇介导的产生和重组过程相一致,该过程将目前可用的商用二极管的功率密度降低到mW/cm2。
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